The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2011

Filed:

Sep. 04, 2009
Applicants:

Weize Xiong, Austin, TX (US);

Andrew Marshall, Dallas, TX (US);

Cloves R. Cleavelin, Dallas, TX (US);

Howard L. Tigelaar, Allen, TX (US);

Inventors:

Weize Xiong, Austin, TX (US);

Andrew Marshall, Dallas, TX (US);

Cloves R. Cleavelin, Dallas, TX (US);

Howard L. Tigelaar, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention relates to a memory cell. The memory cell includes a multi-gate field effect transistor associated with a first region of a semiconductor fin. The memory cell also includes a fin capacitor coupled to a drain of the multi-gate field effect transistor and associated with a second region of the semiconductor fin, where the fin capacitor has an approximately degenerate doping concentration in the second region. Other devices and methods are also disclosed.


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