The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
May. 04, 2009
Seung-ha Choi, Siheung-si, KR;
Ki-yeup Lee, Seoul, KR;
Sang-gab Kim, Seoul, KR;
Shin-il Choi, Seoul, KR;
Dong-ju Yang, Seoul, KR;
Hong-kee Chin, Suwon-si, KR;
Yu-gwang Jeong, Yongin-si, KR;
Ji-young Park, Suwon-si, KR;
Dong-hoon Lee, Seoul, KR;
Byeong-beom Kim, Suwon-si, KR;
Seung-Ha Choi, Siheung-si, KR;
Ki-Yeup Lee, Seoul, KR;
Sang-Gab Kim, Seoul, KR;
Shin-il Choi, Seoul, KR;
Dong-Ju Yang, Seoul, KR;
Hong-Kee Chin, Suwon-si, KR;
Yu-Gwang Jeong, Yongin-si, KR;
Ji-Young Park, Suwon-si, KR;
Dong-Hoon Lee, Seoul, KR;
Byeong-Beom Kim, Suwon-si, KR;
Abstract
After forming a signal line including aluminum, an upper layer of an oxide layer including aluminum that covers the signal line is formed in the same chamber and by using the same sputtering target as the signal line, or a buffer layer of an oxide layer including aluminum is formed in a contact hole exposing the signal line during the formation of the contact hole. Accordingly, the contact characteristic between an upper layer including indium tin oxide ('ITO') or indium zinc oxide ('IZO') and the signal line may be improved to enhance the adhesion therebetween while not increasing the production cost of the thin film transistor (“TFT”) array panel.