The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Feb. 13, 2007
Yuansheng MA, Santa Clara, CA (US);
Harry J. Levinson, Saratoga, CA (US);
Thomas Wallow, San Carlos, CA (US);
Yuansheng Ma, Santa Clara, CA (US);
Harry J. Levinson, Saratoga, CA (US);
Thomas Wallow, San Carlos, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method for determining a power spectral density of an edge of at least one patterned feature situated over a semiconductor wafer includes measuring the edge of the at least one patterned feature at a number of points on the edge. The method further includes determining an autoregressive estimation of the edge of the at least one patterned feature using measured data corresponding to a number of points on the edge. The method further includes determining a power spectral density of the edge using autoregressive coefficients from the autoregressive estimation. The method further includes utilizing the power spectral density to characterize line edge roughness of the at least one patterned feature in a frequency domain.