The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Oct. 11, 2007
Christophe Fery, Niedereschach, DE;
Larisa Von Riewel, Villingen-Schwenningen, DE;
Gael Pilard, Moenchweiler, DE;
Stephan Knappmann, Rottwell, DE;
Christophe Fery, Niedereschach, DE;
Larisa von Riewel, Villingen-Schwenningen, DE;
Gael Pilard, Moenchweiler, DE;
Stephan Knappmann, Rottwell, DE;
Thomson Licensing, Boulogne-Billancourt, FR;
Abstract
The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.