The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2011

Filed:

Apr. 19, 2007
Applicants:

Srdjan Kordic, Biviers, FR;

Meindert M. Lunenborg, Crolles, FR;

Jean-philippe Jacquemin, Crolles, FR;

Inventors:

Srdjan Kordic, Biviers, FR;

Meindert M. Lunenborg, Crolles, FR;

Jean-Philippe Jacquemin, Crolles, FR;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/32 (2006.01); G01K 7/34 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit () is provided on the semiconductor substrate and is formed by a junction capacitor () and an inductor (). The substrate is placed on a holder and the resonance circuit () is irradiated with electromagnetic energy of an electromagnetic field () generated by a radiation device (). A resonance frequency of the resonance circuit () is determined by detecting an effect of the resonance circuit () on the irradiated electromagnetic field (), and a temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor ().


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