The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Oct. 11, 2006
Thorsten Trupke, Coogee, AU;
Robert Andrew Bardos, Bronte, AU;
Thorsten Trupke, Coogee, AU;
Robert Andrew Bardos, Bronte, AU;
BT Imaging Pty Ltd, Surry Hills, New South Wales, AU;
Abstract
Methods () and systems () for inspecting an indirect bandgap semiconductor structure () are described. A light source () generates light () suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (). A short-pass filter unit () reduces long-wavelength light of the generated light above a specified emission peak. A collimator () collimates () the light. A large area of the indirect bandgap semiconductor structure () is substantially uniformly and simultaneously illuminated () with the collimated, short-pass filtered light. An image capture device () captures () images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are imaged processed () to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure () using the spatial variation of the photoluminescence induced in the large area.