The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Nov. 12, 2009
Ikuo Hakomori, Itabashi-ku, JP;
Yuji Nakamura, Itabashi-ku, JP;
Keiichi Nakanishi, Turugashima, JP;
Koichi Ida, Turugashima, JP;
Ikuo Hakomori, Itabashi-ku, JP;
Yuji Nakamura, Itabashi-ku, JP;
Keiichi Nakanishi, Turugashima, JP;
Koichi Ida, Turugashima, JP;
Tanita Corporation, Tokyo, JP;
Toko, Inc., Tokyo, JP;
Abstract
A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.