The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Aug. 30, 2005
Akira Toriumi, Kanagawa, JP;
Koji Kita, Tokyo, JP;
Kazuyuki Tomida, Leuven, BE;
Yoshiki Yamamoto, Hyogo, JP;
Akira Toriumi, Kanagawa, JP;
Koji Kita, Tokyo, JP;
Kazuyuki Tomida, Leuven, BE;
Yoshiki Yamamoto, Hyogo, JP;
The University of Tokyo, Tokyo, JP;
Abstract
A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVA) semiconductor board and a first oxide layer. The first oxide layer is composed of MOexisting on the board, where M is a first metal species selected from the group 4 (IVB); and M'O, where M′ is a second metal species selected from the group 3 (IIIB) and a group composed of lanthanide series, and x and y are integers decided by the oxidation number of M.