The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Aug. 11, 2009
Shinjiro Kato, Chiba, JP;
Naoto Saito, Chiba, JP;
Shinjiro Kato, Chiba, JP;
Naoto Saito, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
Provided is a semiconductor device which includes a metal oxide semiconductor (MOS) transistor having high driving performance and high withstanding voltage with a thick gate oxide film. In the local oxidation-of-silicon (LOCOS) offset MOS transistor having high withstanding voltage, in order to prevent a gate oxide film () formed on a channel formation region () from being etched at a time of removing the gate oxide film () with a polycrystalline silicon gate electrode () being used as a mask to form a second conductivity type high concentration source region () and a second conductivity type high concentration drain region (), a source field oxide film () is formed also on a source side of the channel formation region (), and in addition, a length of a second conductivity type high concentration source field region () is optimized. Accordingly, it is possible to obtain a MOS transistor having high driving performance and high withstanding voltage with a thick gate oxide film.