The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Apr. 02, 2009
Shien Cho, Kanagawa, JP;
Shien Cho, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor memory in which a gate insulating film (tunnel insulating film) in a memory cell provides higher operational reliability. The semiconductor memory includes an insulating filmbetween a silicon substrateand a gate electrode. The insulating filmis composed of a silicon oxide film, a silicon nitride filmand a silicon oxide film, stacked in this order between the silicon substrate and the gate electrode from the side of the silicon substrate. There are provided hydrogen occluding filmsandon an interface between the silicon oxide filmand the silicon nitride film, on an interface between the silicon nitride filmand the silicon oxide filmand on an interface between the silicon oxide filmand the gate electrode(FIGS.A andB).