The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Apr. 24, 2008
Tetsuya Ishimaru, Tokyo, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Toshiyuki Mine, Fussa, JP;
Yasunobu Aoki, Kodaira, JP;
Koichi Toba, Hitachinaka, JP;
Kan Yasui, Kodaira, JP;
Tetsuya Ishimaru, Tokyo, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Toshiyuki Mine, Fussa, JP;
Yasunobu Aoki, Kodaira, JP;
Koichi Toba, Hitachinaka, JP;
Kan Yasui, Kodaira, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A memory cell includes an ONO film composed of a stacked film of a silicon nitride film SIN which is a charge trapping portion and oxide films BOTOX and TOPOX positioned under and over the silicon nitride film, a memory gate electrode MG over the ONO film, a source region MS, and a drain region MD, and program or erase is performed by hot carrier injection in the memory cell. In the memory cell, a total concentration of N—H bonds and Si—H bonds contained in the silicon nitride film SIN is made to be 5×10cmor less.