The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Sep. 26, 2006
Pierre Goarin, Etterbeek, BE;
Pierre Goarin, Etterbeek, BE;
NXP B.V., Eindhoven, NL;
Abstract
A non-volatile memory device on a substrate layer () comprises source and drain regions () and a channel region (). The source and drain regions () and the channel region () are arranged in a semiconductor layer () on the substrate layer (). The channel region () is fin-shaped and extends longitudinally (X) between the source region and the drain region (). The channel region () comprises two fin portions () and an intra-fin space (), the fin portions () extending in the longitudinal direction (X) and being spaced apart, and the intra-fin space () being located in between the fin portions (), and a charge storage area () is located in the intra-fin space () between the fin portions ().