The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Jan. 28, 2008
Applicants:
Barend Visser, Potchefstroom, ZA;
Ocker Cornelis DE Jager, Potchefstroom, ZA;
Inventors:
Barend Visser, Potchefstroom, ZA;
Ocker Cornelis De Jager, Potchefstroom, ZA;
Assignee:
North-West University, Potschefstroom, ZA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulated gate semiconductor device () includes a gate (), a source terminal (), a drain terminal () and a variable input capacitance at the gate. A ratio between the input capacitance (C) when the device is on and the input capacitance Cwhen the device is off is less than two and preferably substantially equal to one. This is achieved in one embodiment of the invention by an insulation layerat the gate having an effective thickness dlarger than a minimum thickness.