The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Jan. 04, 2008
Dong-hun Kang, Yongin-si, KR;
Stefanovich Genrikh, Suwon-si, KR;
I-hun Song, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Dong-hun Kang, Yongin-si, KR;
Stefanovich Genrikh, Suwon-si, KR;
I-hun Song, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.