The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Jul. 30, 2009
Hirotaka Amasuga, Tokyo, JP;
Hirotaka Amasuga, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A field-effect transistor with improved moisture resistance without an increase in gate capacitance, and a method of manufacturing the field-effect transistor are provided. The field-effect transistor includes: a T-shaped gate electrode on a semiconductor layer; and a first highly moisture-resistant protective film including one of an insulating film and an organic film having high etching resistance, the first highly moisture-resistant protective film being located above the T-shaped gate electrode, over all of a region in which the T-shaped gate electrode is located. A cavity is located between the semiconductor layer and the first highly moisture-resistant protective film, below a canopy of the T-shaped gate electrode. An end surface of the cavity is closed by a second highly moisture-resistant film.