The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Aug. 09, 2010
Wen-fa Tsai, Taoyuan County, TW;
Jyong-fong Liao, Taoyuan County, TW;
Yen-yu Chen, Taipei, TW;
Chee Wee Liu, Taipei, TW;
Chi-fong Ai, Taoyuan County, TW;
Wen-Fa Tsai, Taoyuan County, TW;
Jyong-Fong Liao, Taoyuan County, TW;
Yen-Yu Chen, Taipei, TW;
Chee Wee Liu, Taipei, TW;
Chi-Fong Ai, Taoyuan County, TW;
Atomic Energy Council, Taoyuan, TW;
Abstract
The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.