The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Oct. 12, 2010
Benjamin Kaczer, Leuven, BE;
Jacopo Franco, Leuven, BE;
Benjamin Kaczer, Leuven, BE;
Jacopo Franco, Leuven, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Abstract
A method for forming a semiconductor device is disclosed. The device includes a control electrode on a semiconductor P-channel layer having at least a gate dielectric layer. The gate dielectric layer has an exponentially decreasing density of defect levels Ein as function of energy from the band edges of the adjacent layer (the semiconductor P-channel layer or optionally the capping layer) toward the center of the bandgap of this layer. The method includes selecting at least one parameter of the P-channel semiconductor device such that the inversion carrier injection into the distribution of defect levels deviates from the energy level at the center of the bandgap of a layer adjacent the gate dielectric layer at the same side of the gate dielectric layer as the P-channel layer, with a value not more than about 49%, such as not more than about 40%, for example not more than about 20%, not more than about 10%, even not more than about 5% of that bandgap in eV. In one aspect, this allows reducing NBTI.