The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2011

Filed:

Aug. 10, 2007
Applicants:

Alyssa B. Apsel, Ithaca, NY (US);

Anand M. Pappu, Ithaca, NY (US);

Cheng Po Chen, Ithaca, NY (US);

Tao Yin, San Jose, CA (US);

Inventors:

Alyssa B. Apsel, Ithaca, NY (US);

Anand M. Pappu, Ithaca, NY (US);

Cheng Po Chen, Ithaca, NY (US);

Tao Yin, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less than about 90 nm. The integrated circuit can further include a transimpedance amplifier (TIA) receiving an output from the phototransistor. The phototransistor and the TIA can be built on a silicon substrate.


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