The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Jan. 05, 2006
Yoshiharu Ohta, Yamatokoriyama, JP;
Rika Tanaka, Yamatokoriyama, JP;
Hiroshi Nitta, Yamatokoriyama, JP;
Yoshitaka Morioka, Yamatokoriyama, JP;
Yoshiharu Ohta, Yamatokoriyama, JP;
Rika Tanaka, Yamatokoriyama, JP;
Hiroshi Nitta, Yamatokoriyama, JP;
Yoshitaka Morioka, Yamatokoriyama, JP;
Nitta Haas Incorporated, Osaka, JP;
Abstract
An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishing, i.e., fumed silica and colloidal silica. A ratio (selectivity ratio) between a polishing rate of a metal film such as a tungsten film and a polishing rate of an insulating film (oxide film) such as a SiOfilm can be adjusted by changing a mixing ratio between fumed silica and colloidal silica, and dishing and erosion of the semiconductor wafer can be thus reduced.