The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Mar. 27, 2008
Doug Yong Sung, Suwon-si, KR;
Tae-yong Kwon, Suwon-si, KR;
Kyung Hyun Han, Suwon-si, KR;
Kyung Chun Lim, Suwon-si, KR;
Sang Min Jeong, Seoul, KR;
Doug Yong Sung, Suwon-si, KR;
Tae-Yong Kwon, Suwon-si, KR;
Kyung Hyun Han, Suwon-si, KR;
Kyung Chun Lim, Suwon-si, KR;
Sang Min Jeong, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.