The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Dec. 31, 2009
Applicants:

Byoung Kwan Jeong, Jeollabuk-do, KR;

Chul Woo Yang, Gyeonggi-do, KR;

MI Sun Yoon, Jeollabuk-do, KR;

Inventors:

Byoung Kwan Jeong, Jeollabuk-do, KR;

Chul Woo Yang, Gyeonggi-do, KR;

Mi Sun Yoon, Jeollabuk-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of programming a nonvolatile memory device includes an inputting step for inputting program data to a first latch of each of page buffers, and inputting redundancy data to a second latch of each of the page buffers, a verification result storage step for performing a program operation on selected memory cells using the program data stored in the first latch, performing a verification operation for the program operation, and storing a result of the verification operation in the first latch of each of the page buffers coupled with the selected memory cells, a verification result change step for changing the result stored in the first latch using the redundancy data stored in the second latch, and a verification check step for determining whether all data stored in the second latches, after the verification result change step, are program pass data.


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