The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Dec. 31, 2007
Applicants:
Andreas Scade, Dresden, DE;
Stefan Guenther, Dresden, DE;
Inventors:
Andreas Scade, Dresden, DE;
Stefan Guenther, Dresden, DE;
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory circuit includes a single transistor storing both volatile and nonvolatile bit charges.
Quick Actions:
Scade, Andreas. (2011). 3t high density nvdram cell (U.S. Patent No. 8059458). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8059458
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile