The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Jan. 24, 2011
Xiaobin Wang, Chanhassen, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Alan Wang, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Wenzhong Zhu, Apple Valley, MN (US);
Hai LI, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Alan Wang, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Wenzhong Zhu, Apple Valley, MN (US);
Hai Li, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.