The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Nov. 26, 2007
Applicants:

Hiroshi Iwata, Nara, JP;

Akihide Shibata, Nara, JP;

Kohichiro Adachi, Tenri, JP;

Masayuki Nakano, Nara, JP;

Inventors:

Hiroshi Iwata, Nara, JP;

Akihide Shibata, Nara, JP;

Kohichiro Adachi, Tenri, JP;

Masayuki Nakano, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a semiconductor storage unit that has a simple structure requiring only a small number of processes to produce, and is provided with a gate insulating film having a memory function. The semiconductor storage unit has a semiconductor layer, two diffusion layer regions forming a source region and a drain region, which are formed on the semiconductor layer, a channel region fixed between the two diffusion layer regions, a gate insulating film that is formed on the channel region, and made of a silicon oxide film containing carbon atoms of 0.1 to 5.0 atomic percent, and a gate electrode formed on the gate insulating film.


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