The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Feb. 14, 2008
Applicant:
Mueng-ryul Lee, Seoul, KR;
Inventor:
Mueng-Ryul Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/39 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor transistor device includes a drift region, an insulating structure, a gate insulator, a gate electrode, a source, and a drain. The drift region includes a first lateral portion having a first dopant concentration and a second lateral portion having a second dopant concentration that is higher than the first lateral portion. The insulating structure is formed on the drift region and is disposed over a border between the first and second lateral portions such that hole generation is minimized in the drift region during operation.