The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Dec. 23, 2008
Hyung Jun Kim, Seoul, KR;
Hyun Cheol Koo, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Suk Hee Han, Seoul, KR;
Kyung Ho Kim, Seoul, KR;
Hyung Jun Kim, Seoul, KR;
Hyun Cheol Koo, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Suk Hee Han, Seoul, KR;
Kyung Ho Kim, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer.