The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Sep. 11, 2008
Sachio Karino, Miyagi, JP;
Eiji Takase, Miyagi, JP;
Makoto Oogane, Kanagawa, JP;
Tsuyoshi Nagatake, Kanagawa, JP;
Michiru Kamada, Miyagi, JP;
Hironobu Narui, Kanagawa, JP;
Nobukata Okano, Kanagawa, JP;
Sachio Karino, Miyagi, JP;
Eiji Takase, Miyagi, JP;
Makoto Oogane, Kanagawa, JP;
Tsuyoshi Nagatake, Kanagawa, JP;
Michiru Kamada, Miyagi, JP;
Hironobu Narui, Kanagawa, JP;
Nobukata Okano, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.