The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Feb. 26, 2009
Hidekazu Miyake, Mobara, JP;
Eiji Oue, Mobara, JP;
Takuo Kaitoh, Mobara, JP;
Toshio Miyazawa, Chiba, JP;
Hidekazu Miyake, Mobara, JP;
Eiji Oue, Mobara, JP;
Takuo Kaitoh, Mobara, JP;
Toshio Miyazawa, Chiba, JP;
Hitachi Displays, Ltd., Chiba, JP;
Abstract
Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.