The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Mar. 06, 2009
Sung-hoon Kim, Seoul, KR;
Kwan Hee Lee, Kingsgrove, AU;
Sung-hoon Yang, Seoul, KR;
Young-hoon Yoo, Cheonan-si, KR;
Sung-Hoon Kim, Seoul, KR;
Kwan Hee Lee, Kingsgrove, AU;
Sung-Hoon Yang, Seoul, KR;
Young-Hoon Yoo, Cheonan-si, KR;
Abstract
In one embodiment, a thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, first and second electrodes and a protective layer. The semiconductor pattern is formed on the gate electrode, and includes a first semiconductor layer deposited at a first deposition speed and a second semiconductor layer deposited at a second deposition speed faster than the first deposition speed. The first and second electrodes are spaced apart from each other on the semiconductor pattern. The protective layer is formed on the semiconductor pattern to cover the first and second electrodes, and makes contact with a channel region of the first semiconductor layer to form an interface with the first semiconductor layer. Thus, electrical characteristics of the TFT may be improved.