The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
May. 13, 2010
Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation
Sarko Cherekdjian, Campbell, CA (US);
Jeffrey Scott Cites, Horseheads, NY (US);
James Gregory Couillard, Ithaca, NY (US);
Richard Orr Maschmeyer, Corning, NY (US);
Michael John Moore, Corning, NY (US);
Alex Usenko, Painted Post, NY (US);
Sarko Cherekdjian, Campbell, CA (US);
Jeffrey Scott Cites, Horseheads, NY (US);
James Gregory Couillard, Ithaca, NY (US);
Richard Orr Maschmeyer, Corning, NY (US);
Michael John Moore, Corning, NY (US);
Alex Usenko, Painted Post, NY (US);
Corning Incorporated, Corning, NY (US);
Abstract
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.