The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Aug. 26, 2005
Applicants:

Aaron Wadell, Wayne, PA (US);

Jiangeng Xue, Piscataway, NJ (US);

Inventors:

Aaron Wadell, Wayne, PA (US);

Jiangeng Xue, Piscataway, NJ (US);

Assignee:

Global Photonic Energy Corp., Medford Lakes, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); B05D 5/12 (2006.01); B28B 19/00 (2006.01); B29B 15/10 (2006.01); C23C 18/00 (2006.01); C23C 20/00 (2006.01); C23C 24/00 (2006.01); C23C 26/00 (2006.01); C23C 28/00 (2006.01); C23C 30/00 (2006.01); H01C 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic photosensitive optoelectronic device is formed in which the organic photoconductive materials are encapsulated by an electrode of the device. A first transparent film is provided that comprises a first electrically conductive material, arranged on a transparent substrate. A first photoconductive organic material is deposited over the first electrically conductive material. A metal is deposited at an initial rate of no more than 1 nm/s over the first photoconductive organic material, completely covering any exposed portions of the first photoconductive organic material and any exposed interfaces with the first photoconductive organic material to a thickness of no less than 10 nm. After the thickness of no less than 10 nm is obtained, the metal is sputtered at an increased rate at least three times the initial rate until a cumulative thickness of the metal completely covering the previously exposed portions of the first photoconductive organic material and the previously exposed interfaces with the first conductive organic material is at least 250 nm.


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