The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Oct. 10, 2006
Applicants:

Konrad Bach, Tiefthal, DE;

Daniel Gaebler, Ilmenau, DE;

Michael Fischer, Uhlstaedt-Kirchhasel, DE;

Mike Stubenrauch, Ilmenau, DE;

Inventors:

Konrad Bach, Tiefthal, DE;

Daniel Gaebler, Ilmenau, DE;

Michael Fischer, Uhlstaedt-Kirchhasel, DE;

Mike Stubenrauch, Ilmenau, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

By means of an RIE etch process for silicon (), a pin-type structure () without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of the etch plasma in self-organization wherein, among others, a broadband antireflective behavior is obtained that may be applicable in many fields.


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