The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Nov. 17, 2009
Shingo Eguchi, Tochigi, JP;
Yoshiaki Oikawa, Tochigi, JP;
Masahiro Katayama, Tochigi, JP;
Ami Nakamura, Tochigi, JP;
Yohei Monma, Tochigi, JP;
Shingo Eguchi, Tochigi, JP;
Yoshiaki Oikawa, Tochigi, JP;
Masahiro Katayama, Tochigi, JP;
Ami Nakamura, Tochigi, JP;
Yohei Monma, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.