The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Mar. 28, 2007
Applicants:

Takayuki Hirano, Kobe, JP;

Nobuyuki Kawakami, Kobe, JP;

Masato Kannaka, Kobe, JP;

Inventors:

Takayuki Hirano, Kobe, JP;

Nobuyuki Kawakami, Kobe, JP;

Masato Kannaka, Kobe, JP;

Assignee:

Kobe Steel, Ltd., Hyogo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); G01P 15/08 (2006.01); G01L 9/08 (2006.01); G01F 1/692 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide filmon a surface of a silicon substrateby plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide filmformed on the substrate; and a removal step of removing a part of the substratein such a manner that a membrane-corresponding part of the silicon oxide filmis supported as a membrane in a hollow state with respect to the substrateto form a recessed part


Find Patent Forward Citations

Loading…