The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
May. 03, 2007
Jae-min Lee, Daejeon Metropolitan, KR;
Hyeon Choi, Daejeon Metropolitan, KR;
Min-jeong Lee, Daejeon Metropolitan, KR;
Hee-jung Kim, Daejeon Metropolitan, KR;
Young-whan Park, Daejeon Metropolitan, KR;
Dong-ryul Kim, Daejeon Metropolitan, KR;
Jae-Min Lee, Daejeon Metropolitan, KR;
Hyeon Choi, Daejeon Metropolitan, KR;
Min-Jeong Lee, Daejeon Metropolitan, KR;
Hee-Jung Kim, Daejeon Metropolitan, KR;
Young-Whan Park, Daejeon Metropolitan, KR;
Dong-Ryul Kim, Daejeon Metropolitan, KR;
LG Chem, Ltd., Seoul, KR;
Abstract
The present invention relates to a composition for forming a gate insulating layer of an organic thin film transistor comprising polyarylate, and an organic thin film transistor comprising a gate insulating layer, which is formed using the composition, in contact with an organic semiconductor channel.