The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8054706 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 08, 2011

Filed:

Mar. 19, 2009
Applicants:

Phillip Mark Goldman, Dayton, MN (US);

Muralikrishnan Balakrishnan, Eden Prairie, MN (US);

Inventors:

Phillip Mark Goldman, Dayton, MN (US);

Muralikrishnan Balakrishnan, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for protecting an electrical device using a non-volatile memory cell, such as an STRAM or RRAM memory cell. In some embodiments, a memory element is connected in parallel with a sensor element, where the memory element is configured to be repetitively reprogrammable between a high resistance state and a low resistance state. The memory element is programmed to the low resistance state when the sensor element is in a non-operational state and reprogrammed to the high resistance state when the sensor element is in an operational state.


Find Patent Forward Citations

Goldman, Phillip. (2011). Sensor protection using a non-volatile memory cell (U.S. Patent No. 8054706). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8054706

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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