The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8054678 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 08, 2011

Filed:

Oct. 07, 2010
Applicants:

Alan Xuguang Wang, Eden Prairie, MN (US);

Xiaobin Wang, Chanhassen, MN (US);

Dimitar V. Dimitrov, Edina, MN (US);

Hai LI, Eden Prairie, MN (US);

Haiwen Xi, San Jose, CA (US);

Harry Hongyue Liu, Maple Grove, MN (US);

Inventors:

Alan Xuguang Wang, Eden Prairie, MN (US);

Xiaobin Wang, Chanhassen, MN (US);

Dimitar V. Dimitrov, Edina, MN (US);

Hai Li, Eden Prairie, MN (US);

Haiwen Xi, San Jose, CA (US);

Harry Hongyue Liu, Maple Grove, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.


Find Patent Forward Citations

Wang, Alan. (2011). Stuck-at defect condition repair for a non-volatile memory cell (U.S. Patent No. 8054678). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8054678

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