The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2011

Filed:

Oct. 09, 2008
Applicant:

Jianxin Zhu, Eagan, MN (US);

Inventor:

Jianxin Zhu, Eagan, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic tunnel junction cell having a free layer and first pinned layer with perpendicular anisotropy, the cell including a coupling layer between the free layer and a second pinned layer, the coupling layer comprising a phase change material switchable from an antiferromagnetic state to a ferromagnetic state. In some embodiments, at least one actuator electrode proximate the coupling layer transfers a strain from the electrode to the coupling layer to switch the coupling layer from the antiferromagnetic state to the ferromagnetic state. Memory devices and methods are also described.


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