The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2011

Filed:

Feb. 20, 2007
Applicants:

Seiji Takahashi, Yokkaichi, JP;

Masayuki Kato, Yokkaichi, JP;

Masahiko Furuichi, Yokkaichi, JP;

Isao Isshiki, Yokkaichi, JP;

Inventors:

Seiji Takahashi, Yokkaichi, JP;

Masayuki Kato, Yokkaichi, JP;

Masahiko Furuichi, Yokkaichi, JP;

Isao Isshiki, Yokkaichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gate driverperforms a normal charging operation for a power MOSFETby driving a charge pumpsolely, when a low-level control signal S(ON signal) is received during a normal state. On the other hand, if a low-level control signal S(ON signal) is received during a load anomaly state, an urgent charge FET, as well as the charge pump, is turned on when a load current IL exceeds a second anomaly threshold current ILfc, so that a rapid charging operation is performed.


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