The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Jan. 20, 2010
BO Wang, West Columbia, SC (US);
Antonello Monti, Irmo, SC (US);
Jason Bakos, Chapin, SC (US);
Marco Riva, Canonica d'Adda, IT;
Bo Wang, West Columbia, SC (US);
Antonello Monti, Irmo, SC (US);
Jason Bakos, Chapin, SC (US);
Marco Riva, Canonica d'Adda, IT;
University of South Carolina, Columbia, SC (US);
Abstract
A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile