The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Jan. 27, 2010
Hisashi Tanie, Mito, JP;
Nobuhiko Chiwata, Matsue, JP;
Motoki Wakano, Yasugi, JP;
Takeyuki Itabashi, Hitachi, JP;
Hisashi Tanie, Mito, JP;
Nobuhiko Chiwata, Matsue, JP;
Motoki Wakano, Yasugi, JP;
Takeyuki Itabashi, Hitachi, JP;
Hitachi Metals, Ltd., Tokyo, JP;
Abstract
A novel structure capable of reducing the stress in the insulating layer in the semiconductor element and thereby securing reliability is provided. When the semiconductor element and the substrate are connected with a solder, the stress generated in the insulating layer is reduced by placing a spherical core made of a material having a greater rigidity inside the solder and satisfying the following inequalities: 1 GPa<(Young's modulus of a encapsulation resin)<30 GPa, 20 ppm/k<(linear coefficient of expansion of the encapsulation resin)<200 ppm/k, and 10 MPa<(yield stress of the solder at room temperature)<30 MPa. At the time of connection, the thickness of the solder to be placed between the land on the surface of the semiconductor element and the core is adjusted to 1/10 or less of the terminal pitch.