The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Aug. 06, 2009
Pamela J. Welch, Mesa, AZ (US);
Wen Ling M. Huang, Scottsdale, AZ (US);
David G. Morgan, Phoenix, AZ (US);
Hernan A. Reuda, Phoenix, AZ (US);
Vishal P. Trivedi, Chandler, AZ (US);
Pamela J. Welch, Mesa, AZ (US);
Wen Ling M. Huang, Scottsdale, AZ (US);
David G. Morgan, Phoenix, AZ (US);
Hernan A. Reuda, Phoenix, AZ (US);
Vishal P. Trivedi, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An improved varactor diode () having first () and second () terminals is obtained by providing a substrate () having a first surface () in which are formed isolation regions () separating first () and second () parts of the diode (). A varactor junction () is formed in the first part () and having a first side () coupled to the first terminal () and a second side () coupled to the second terminal () via a sub-isolation buried layer (SIBL) region () extending under the bottom () and partly up the sides () of the isolation regions () to a further doped region () ohmically connected to the second terminal (). The first part () does not extend to the SIBL region (). The varactor junction () desirably comprises a hyper-abrupt doped region (). The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode () while still providing adequate Q.