The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Apr. 14, 2008
Masayasu Tanaka, Tokyo, JP;
Masayasu Tanaka, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An excessive metallic film on a device isolation region is prevented from contributing to silicidation in an end of a source-drain diffusion layer region to thereby form a silicide film with uniform film thickness. There are sequentially conducted a step of forming a device isolation regionin a substrateincluding a silicon layer at least in a surface thereof and filling a first insulator in the device isolation region, a step of making height of an upper surface of the first insulator less than height of an upper surface of the substrateand forming a sidewall filmon a sidewall of the device isolation region, and a step of depositing a metallic filmon the substrateand then conducting silicidation through a thermal process.