The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Jun. 01, 2009
Yung-hui Yeh, Hsinchu, TW;
Chun-cheng Cheng, Pingtung, TW;
Jian-jang Huang, Taipei, TW;
Shih-hua Hsiao, Taipei, TW;
Kuang-chung Liu, Yonghe, TW;
Yung-Hui Yeh, Hsinchu, TW;
Chun-Cheng Cheng, Pingtung, TW;
Jian-Jang Huang, Taipei, TW;
Shih-Hua Hsiao, Taipei, TW;
Kuang-Chung Liu, Yonghe, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Abstract
An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile