The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Dec. 10, 2009
Pil-kyu Kang, Gyeonggi-do, KR;
Daelok Bae, Seoul, KR;
Jongwook Lee, Gyeonggi-do, KR;
Seungwoo Choi, Seoul, KR;
Yong-hoon Son, Gyeonggi-do, KR;
Jong-hyuk Kang, Gyeonggi-do, KR;
Jung Ho Kim, Gyeonggi-do, KR;
Pil-Kyu Kang, Gyeonggi-do, KR;
Daelok Bae, Seoul, KR;
Jongwook Lee, Gyeonggi-do, KR;
Seungwoo Choi, Seoul, KR;
Yong-Hoon Son, Gyeonggi-do, KR;
Jong-Hyuk Kang, Gyeonggi-do, KR;
Jung Ho Kim, Gyeonggi-do, KR;
Abstract
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.