The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Sep. 10, 2007
Yoshiki Yonamoto, Oyama, JP;
Yoshiki Yonamoto, Oyama, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (), a silicon nitride film () serving as a charge storage film, a silicon oxide film (), and a gate electrode () which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film () has a stacked structure of a silicon oxynitride film () and a silicon oxide film (). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film () decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film ().