The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Sep. 08, 2005
Gehan Anil Joseph Amaratunga, Cambridge, GB;
Mihai Brezeanu, Cambridge, GB;
Jeremy Suhail Rashid, Cambridge, GB;
Nalin Lalith Rupesinghe, Cambridge, GB;
Antonella Tajani, London, GB;
Daniel James Twitchen, Sunningdale, GB;
Florin Udrea, Cambridge, GB;
Christopher John Howard Wort, Wantage, GB;
Gehan Anil Joseph Amaratunga, Cambridge, GB;
Mihai Brezeanu, Cambridge, GB;
Jeremy Suhail Rashid, Cambridge, GB;
Nalin Lalith Rupesinghe, Cambridge, GB;
Antonella Tajani, London, GB;
Daniel James Twitchen, Sunningdale, GB;
Florin Udrea, Cambridge, GB;
Christopher John Howard Wort, Wantage, GB;
Element Six Limited, Isle of Man, GB;
Abstract
A high voltage diamond based switching device capable of sustaining high currents in the on state with a relatively low impedance and a relatively low optical switching flux, and capable of being switched off in the presence of the high voltage being switched. The device includes a diamond body having a Schottky barrier contact, held in reverse bias by the applied voltage to be switched, to an essentially intrinsic diamond layer or portion in the diamond body, a second metal contact, and an optical source or other illuminating or irradiating device such that when the depletion region formed by the Schottky contact to the intrinsic diamond layer is exposed to its radiation charge carriers are generated. Cain in the total number of charge carriers then occurs as a result of these charge carriers accelerating under the field within the intrinsic diamond layer and generating further carriers by assisted avalanche breakdown.