The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Nov. 12, 2009
Applicant:
Takuo Ohashi, Kanagawa-ken, JP;
Inventor:
Takuo Ohashi, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a vertical diode, an N-type layer, an N-type layer, and a P-type layer are stacked in this order on a lower electrode film, and an upper electrode film is provided thereon. The effective impurity concentration of the N-type layer is lower than the effective impurity concentrations of the N-type layer and the P-type layer. At least one of the N-type layer, the N-type layer, and the P-type layer is formed from a small grain size polycrystalline semiconductor whose each crystal grain does not penetrate each layer through its thickness.