The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Aug. 11, 2009
Stephen W. Bedell, Wappingers Falls, NY (US);
Huajie Chen, Danbury, CT (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Huajie Chen, Danbury, CT (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A substrate material including a Si-containing substrate and an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate. The substrate material further includes a substantially relaxed SiGe alloy layer present atop the insulating region, wherein the substantially relaxed SiGe alloy layer has a planar defect density from about 5000 defects/cmor less. The substrate material may be employed in a heterostructure, in which a strained Si layer is present atop the substantially relaxed SiGe alloy layer of the substrate material.