The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
May. 15, 2008
Applicant:
Yuji Hishida, Osaka, JP;
Inventor:
Yuji Hishida, Osaka, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0376 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method, on a surface opposite to the surface on which the p type amorphous silicon layer is stacked; and, by using a laser ablation processing method, through-holes are formed in the n type single-crystalline silicon substrate, the p type amorphous silicon layer, and the n type amorphous silicon layer. Subsequently, an insulating layer is formed on an inner wall surface of each of the through-holes, and then a conductive material is filled therein.